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NTMFS5832NLT1GN-Channel 40 V 20A (Ta), 111A (Tc) 3.1W (Ta), 96W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

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ABRmicro #.ABR2045-NTMFS5-910771
ManufacturerOnsemi
MPN #.NTMFS5832NLT1G
Estimated Lead Time-
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DatasheetDatasheetNTMFS5832NL(PDF)
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 10, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMFS5832
Continuous Drain Current (ID) @ 25°C20A (Ta), 111A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)51 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2700 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation3.1W (Ta), 96W (Tc)
RDS(on) Drain-to-Source On Resistance4.2mOhm @ 20A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTMFS5832NL
Environmental Information
Material Declaration NTMFS5832NLT1Gonsemi REACHonsemi RoHS
PCN Assembly/Origin
Wafer Fab Capacity 27/Jul/2020
PCN Obsolescence/ EOL
Mult Dev EOL 30/Mar/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)