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NTMFS4C59NT3GN-Channel 30 V 9A (Ta), 52A (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

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ABRmicro #.ABR2045-NTMFS4-992937
ManufacturerOnsemi
MPN #.NTMFS4C59NT3G
Estimated Lead Time-
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DatasheetDatasheetNTMFS4C59N(PDF)
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In Stock: 68
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberNTMFS4
Continuous Drain Current (ID) @ 25°C9A (Ta), 52A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1252 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance5.8mOhm @ 30A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.1V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTMFS4C59N
Environmental Information
onsemi REACHonsemi RoHS
PCN Assembly/Origin
Reliability Data Update 09/Jul/2020
PCN Design/Specification
Enlarged Clip Implementation 15/Jan/2015Wafer Fab Chg 31/Dec/2015
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS4C59NT3G is an N-Channel MOSFET manufactured by Onsemi, featuring a maximum drain-source voltage of 30 V. This surface mount device is capable of handling a current of 9A at ambient temperature and up to 52A with appropriate thermal management. It is housed in a 5-DFN (5x6), also known as 8-SOFL, package. The MOSFET exhibits a low on-resistance of 5.8 mOhms at a gate-source voltage of 10V when conducting 30A, ensuring efficient performance. Additionally, it has a total gate charge of 22.2 nC, which enables rapid switching at 10V. The device supports dual gate threshold ratings of 4.5V and 10V, making it versatile for various driving voltages.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.