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NTMFS4982NFT1GN-Channel 30 V 26.5A (Ta), 207A (Tc) 1.5W (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)
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ABRmicro #.ABR2045-NTMFS4-990298
ManufacturerOnsemi
MPN #.NTMFS4982NFT1G
Estimated Lead Time-
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DatasheetNTMFS4982NF(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMFS4982
Continuous Drain Current (ID) @ 25°C26.5A (Ta), 207A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)84 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6000 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.5W (Ta)
RDS(on) Drain-to-Source On Resistance1.3mOhm @ 25A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 1mA
Package / Case8-PowerTDFN, 5 Leads
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS4982NFT1G is an N-Channel MOSFET manufactured by Onsemi. It is designed for surface mounting and features a 5-DFN (5x6) package, also referred to as 8-SOFL. This component can handle a continuous current of 26.5A when measured at ambient temperature (Ta) and 207A at case temperature (Tc). It supports a maximum drain-source voltage of 30V and dissipates 1.5W at ambient conditions. Important electrical characteristics include a gate charge of 84 nC at 10V and a capacitance of 6000 pF at 15V, with gate drive voltages of 4.5V and 10V, facilitating efficient switching performance in various electronic applications.
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