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NTMFS4955NT1GN-Channel 30 V 9.7A (Ta), 48A (Tc) 920mW (Ta), 23.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

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ABRmicro #.ABR2045-NTMFS4-977455
ManufacturerOnsemi
MPN #.NTMFS4955NT1G
Estimated Lead Time-
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DatasheetDatasheetNTMFS4955N(PDF)
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMFS4955
Continuous Drain Current (ID) @ 25°C9.7A (Ta), 48A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10.8 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1264 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation920mW (Ta), 23.2W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 30A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTMFS4955N
Environmental Information
Material Declaration NTMFS4955NT1Gonsemi RoHS
PCN Assembly/Origin
Mult Dev Site Add 7/Apr/2020
PCN Obsolescence/ EOL
Mult Dev EOL 01/Oct/2021
Video File
5 Vgs MOSFET Evaluation Board - ONS321A5VGEVB
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS4955NT1G is an N-channel MOSFET manufactured by Onsemi, designed for efficient power management. It features a maximum drain-source voltage of 30V and can handle a continuous current of 9.7A when mounted on a TA and up to 48A on a TC, with corresponding power dissipation ratings of 920mW and 23.2W. The MOSFET is housed in a compact 5-DFN surface-mount package, measuring 5x6 mm in size. It boasts a low on-resistance of 6 milliohms at a current of 30A and a gate-source voltage of 10V, which contributes to reduced power loss. Additionally, it has an input capacitance of 1264 pF at 15V and a total gate charge of 10.8 nC at a gate voltage of 4.5V, making it suitable for fast switching tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.