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NTMFS4936NCT1GN-Channel 30 V 11.6A (Ta), 79A (Tc) 920mW (Ta), 43W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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ABRmicro #.ABR2045-NTMFS4-1007991
ManufacturerOnsemi
MPN #.NTMFS4936NCT1G
Estimated Lead Time-
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DatasheetNTMFS4936N(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberNTMFS4936
Continuous Drain Current (ID) @ 25°C11.6A (Ta), 79A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)43 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3044 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation920mW (Ta), 43W (Tc)
RDS(on) Drain-to-Source On Resistance3.8mOhm @ 30A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS4936NCT1G is an N-Channel MOSFET manufactured by Onsemi, featuring a 30 V drain-source voltage rating and current handling capabilities of up to 11.6A under ambient temperature conditions (Ta), with a maximum of 79A when the case is optimally cooled (Tc). The device supports a power dissipation of 920mW at ambient temperature and can handle up to 43W when properly heatsinked at the case temperature. It is housed in a surface-mount 5-DFN (5x6) package, also known as 8-SOFL, which facilitates efficient thermal management and compact integration into circuit designs. Additionally, the MOSFET accommodates gate-source voltages up to ±20V and exhibits a capacitance of 3044 pF at 15 V and total gate charge of 43 nC at 10 V, making it suitable for handling substantial switching currents efficiently.
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