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NTMFS4931NT1GN-Channel 30 V 23A (Ta), 246A (Tc) 950mW (Ta) Surface Mount 5-DFN (5x6) (8-SOFL)

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ABRmicro #.ABR2045-NTMFS4-977051
ManufacturerOnsemi
MPN #.NTMFS4931NT1G
Estimated Lead Time-
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DatasheetDatasheetNTMFS4931N(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMFS4931
Continuous Drain Current (ID) @ 25°C23A (Ta), 246A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)128 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9821 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation950mW (Ta)
RDS(on) Drain-to-Source On Resistance1.1mOhm @ 30A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTMFS4931N
Environmental Information
Material Declaration NTMFS4931NT1Gonsemi REACHonsemi RoHS
PCN Assembly/Origin
NTMFS4931 16/Mar/2020
PCN Obsolescence/ EOL
Mult Dev EOL 01/Oct/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTMFS4931NT1G is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications with a 5-DFN (5x6) package. It is capable of handling up to 30 V and supports a continuous drain current of 23A at ambient temperature (Ta) and 246A when appropriately cooled (Tc). The device has a power dissipation capacity of 950mW under ambient conditions. It exhibits a threshold voltage of 2.2V at a gate current of 250µA, and it is optimized for performance with gate-source voltages of 4.5V and 10V. This makes it a versatile component suitable for various high-frequency switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.