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NTMFS4898NFT3GN-Channel 30 V 13.2A (Ta), 117A (Tc) 930mW (Ta), 73.5W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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ABRmicro #.ABR2045-NTMFS4-1038031
ManufacturerOnsemi
MPN #.NTMFS4898NFT3G
Estimated Lead Time-
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMFS4
Continuous Drain Current (ID) @ 25°C13.2A (Ta), 117A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)49.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3233 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation930mW (Ta), 73.5W (Tc)
RDS(on) Drain-to-Source On Resistance3mOhm @ 30A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 1mA
Package / Case8-PowerTDFN, 5 Leads
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS4898NFT3G is an N-channel MOSFET manufactured by Onsemi, designed for surface mount applications in a 5-DFN (5x6) package. It is capable of handling a drain-source voltage of up to 30 volts, with a current capacity of 13.2A when mounted on a typical surface area (Ta) and 117A with proper case mounting (Tc). The device dissipates power at a rate of 930mW under typical surface conditions and can handle up to 73.5W when adequately cooled through its case. It features a capacitance of 3233 pF at 12V and gate charge requirements of 49.5 nC at 10V, with gate drive voltages of 4.5V and 10V.
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