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NTMFS4897NFT3GN-Channel 30 V 17A (Ta), 171A (Tc) 950mW (Ta), 96.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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ABRmicro #.ABR2045-NTMFS4-991975
ManufacturerOnsemi
MPN #.NTMFS4897NFT3G
Estimated Lead Time-
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DatasheetNTMFS4897NF(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMFS4
Continuous Drain Current (ID) @ 25°C17A (Ta), 171A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)83.6 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5660 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation950mW (Ta), 96.2W (Tc)
RDS(on) Drain-to-Source On Resistance2mOhm @ 22A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 1mA
Package / Case8-PowerTDFN, 5 Leads
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS4897NFT3G is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications in a 5-DFN (5x6) package, also known as 8-SOFL. It operates at a maximum of 30V with current ratings of 17A when measured under ambient conditions (Ta) and up to 171A with adequate case cooling (Tc). The device shows a low on-resistance of 2 milliohms with a 22A current at 10V gate-to-source voltage, facilitating efficient power switching. Its power dissipation is rated at 950mW in ambient conditions and can handle up to 96.2W with suitable thermal management at the case level. Additionally, it features a typical input capacitance of 5660 pF at 15V, which affects its switching characteristics.
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