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NTMFS4854NST1GN-Channel 25 V 15.2A (Ta), 149A (Tc) 900mW (Ta), 86.2W (Tc) Surface Mount SO-8FL

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ABRmicro #.ABR2045-NTMFS4-1021043
ManufacturerOnsemi
MPN #.NTMFS4854NST1G
Estimated Lead Time-
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesSENSEFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMFS4
Continuous Drain Current (ID) @ 25°C15.2A (Ta), 149A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))3.2V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)85 nC @ 11.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4830 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation900mW (Ta), 86.2W (Tc)
RDS(on) Drain-to-Source On Resistance2.5mOhm @ 15A, 10V
Package Type (Mfr.)SO-8FL
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerTDFN
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS4854NST1G is an N-channel MOSFET manufactured by Onsemi, designed for efficient power management. It operates at a voltage of up to 25 V and delivers a continuous current of 15.2A when mounted on a standard surface (Ta) and up to 149A with an appropriate heat sink (Tc). The power dissipation capacity is 900mW for surface mount applications and 86.2W with proper thermal conditions. It features a total gate charge of 85 nC at 11.5 V and has an input capacitance of 4830 pF when typically measured at 12 V. Encased in the space-efficient SO-8FL package, this MOSFET is tailored for surface mounting, offering reliable performance in constrained spaces.
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