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NTMFS4837NT1GN-Channel 30 V 10A (Ta), 74A (Tc) 880mW (Ta), 47.2W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
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ABRmicro #.ABR2045-NTMFS4-1033758
ManufacturerOnsemi
MPN #.NTMFS4837NT1G
Estimated Lead Time-
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DatasheetNTMFS4837N(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMFS4
Continuous Drain Current (ID) @ 25°C10A (Ta), 74A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 11.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2048 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation880mW (Ta), 47.2W (Tc)
RDS(on) Drain-to-Source On Resistance5mOhm @ 30A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS4837NT1G is a surface mount N-Channel MOSFET manufactured by Onsemi, designed for efficient power management in electronic circuits. It operates with a maximum drain-source voltage of 30V and can handle a continuous current of 10A under ambient conditions (Ta) and up to 74A when attached to a proper heat sink (Tc). The power dissipation of this MOSFET is rated at 880mW at ambient temperature and up to 47.2W when adequately cooled. It features a total gate charge of 22 nC at a gate-source voltage of 4.5V, and its gate-source voltage rating is ±20V. Packaged in a compact 5-DFN (5x6) footprint, this component is suitable for space-constrained applications where surface mounting is required.
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