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NTMFS4837NHT3GN-Channel 30 V 10.2A (Ta), 75A (Tc) 880mW (Ta), 48W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)

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ABRmicro #.ABR2045-NTMFS4-978225
ManufacturerOnsemi
MPN #.NTMFS4837NHT3G
Estimated Lead Time-
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DatasheetDatasheetNTMFS4837NH(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTMFS4
Continuous Drain Current (ID) @ 25°C10.2A (Ta), 75A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 11.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23.8 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3016 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation880mW (Ta), 48W (Tc)
RDS(on) Drain-to-Source On Resistance5mOhm @ 30A, 10V
Package Type (Mfr.)5-DFN (5x6) (8-SOFL)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / Case8-PowerTDFN, 5 Leads
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Extended Links
Datasheets
NTMFS4837NH
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 21/Jan/2010
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTMFS4837NHT3G is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. It supports a maximum continuous drain current of 10.2A at ambient temperature (Ta) and 75A at case temperature (Tc), with power dissipation ratings of 880mW and 48W, respectively. The device features a low on-resistance of 5mOhm at 30A with a gate-source voltage of 10V, and it can withstand gate-source voltages up to ±20V. The MOSFET is housed in a 5-DFN (5x6) package, also cataloged as 8-SOFL, and has a gate charge capacitance of 3016 pF at 12V, making it suited for efficient power management in various electronic systems.
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