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NTLUS4C16NTAGN-Channel 30 V 9.4A (Ta) 2.37W (Ta) Surface Mount 6-UDFN (1.6x1.6)

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ABRmicro #.ABR2045-NTLUS4-1048287
ManufacturerOnsemi
MPN #.NTLUS4C16NTAG
Estimated Lead Time-
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DatasheetDatasheetNTLUS4C16N(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesµCool™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTLUS4
Continuous Drain Current (ID) @ 25°C9.4A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)690 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.37W (Ta)
RDS(on) Drain-to-Source On Resistance11.4mOhm @ 8A, 10V
Package Type (Mfr.)6-UDFN (1.6x1.6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.1V @ 250µA
Package / Case6-PowerUFDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTLUS4C16N
Environmental Information
Material Declaration NTLUS4C16NTAGonsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Mult Dev EOL 08/Jul/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTLUS4C16NTAG is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications. It operates at a voltage of 30 V and a current of 9.4A with a power dissipation capability of 2.37W in ambient conditions, housed in a compact 6-UDFN package measuring 1.6x1.6 mm. The device features a low on-resistance of 11.4mOhm when subjected to a current of 8A at 10V, and it has a total gate charge of 7.5 nC at 4.5 V, making it efficient for switching tasks. Its gate threshold voltage is characterized by a minimum of 1.8V and up to 10V, allowing for effective control in various configurations.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.