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NTLUS3A90PZTBGP-Channel 20 V 2.6A (Ta) 600mW (Ta) Surface Mount 6-UDFN (1.6x1.6)

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ABRmicro #.ABR2045-NTLUS3-920798
ManufacturerOnsemi
MPN #.NTLUS3A90PZTBG
Estimated Lead Time-
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DatasheetDatasheetNTLUS3A90PZ(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTLUS3
Continuous Drain Current (ID) @ 25°C2.6A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)12.3 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)950 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation600mW (Ta)
RDS(on) Drain-to-Source On Resistance62mOhm @ 4A, 4.5V
Package Type (Mfr.)6-UDFN (1.6x1.6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case6-PowerUFDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTLUS3A90PZ
Environmental Information
Material Declaration NTLUS3A90PZTBGonsemi RoHS
PCN Design/Specification
Copper Wire Conversion 29/May/2014
PCN Obsolescence/ EOL
Mult Dev EOL 08/Jul/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTLUS3A90PZTBG is a P-Channel MOSFET produced by Onsemi, specifically designed for surface mount applications in a compact 6-UDFN package measuring 1.6x1.6 mm. It operates efficiently with a drain-source voltage rating of 20 V and a continuous drain current of 2.6A at thermal conditions defined by (Ta). The device can handle power dissipation of up to 600mW at ambient temperature. Additionally, the MOSFET features an input capacitance of 950 pF when subjected to a 10 V gate-source voltage, and it has a gate-source voltage rating of ±8 V, offering reliable performance for various electronic applications requiring compact and efficient components.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.