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NTLUS3192PZTAGP-Channel 20 V 2.2A (Ta) 600mW (Ta) Surface Mount 6-UDFN (1.6x1.6)
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ABRmicro #.ABR2045-NTLUS3-981604
ManufacturerOnsemi
MPN #.NTLUS3192PZTAG
Estimated Lead Time-
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DatasheetNTLUS3192PZ(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTLUS31
Continuous Drain Current (ID) @ 25°C2.2A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)8.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)450 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation600mW (Ta)
RDS(on) Drain-to-Source On Resistance85mOhm @ 3A, 4.5V
Package Type (Mfr.)6-UDFN (1.6x1.6)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case6-PowerUFDFN
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTLUS3192PZTAG is a P-Channel MOSFET manufactured by Onsemi, designed in a compact 6-UDFN surface mount package measuring 1.6 x 1.6 mm. It operates with a maximum voltage of 20 V and supports a continuous current of 2.2A at a temperature of 25°C, while dissipating power up to 600mW. This MOSFET has an on-resistance of 85 milliohms at a current of 3A and a gate-to-source voltage of 4.5V. It features an input capacitance of 450 pF at 10 V and can be driven by a gate-to-source voltage of as low as 1.5V, making it suitable for low-voltage applications.
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