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NTLJS2103PTAGP-Channel 12 V 3.5A (Ta) 700mW (Ta) Surface Mount 6-WDFN (2x2)
N/A
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ABRmicro #.ABR2045-NTLJS2-1002913
ManufacturerOnsemi
MPN #.NTLJS2103PTAG
Estimated Lead Time-
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DatasheetNTLJS2103P(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTLJS21
Continuous Drain Current (ID) @ 25°C3.5A (Ta)
Drain-to-Source Voltage (VDS)12 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.2V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1157 pF @ 6 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation700mW (Ta)
RDS(on) Drain-to-Source On Resistance40mOhm @ 3A, 4.5V
Package Type (Mfr.)6-WDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)800mV @ 250µA
Package / Case6-WDFN Exposed Pad
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTLJS2103PTAG is a P-Channel MOSFET manufactured by Onsemi, designed for efficient load switching and power management in compact electronic applications. It operates with a drain-to-source voltage of 12V and can handle a continuous current of 3.5A (Ta) with a power dissipation of 700mW (Ta). The MOSFET features a low on-resistance of 40mOhm at 3A and 4.5V, allowing for minimal power loss during operation. It is housed in a 6-WDFN package measuring 2x2 mm, optimized for surface mount applications, and supports gate-source voltages of 1.2V and 4.5V.
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