ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
NTLJF3117PT1GP-Channel 20 V 2.3A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2)

1:$0.4190

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTLJF3-1016963
ManufacturerOnsemi
MPN #.NTLJF3117PT1G
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDatasheetNTLJF3117P(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 6496
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.4190
Ext. Price$ 0.4190
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.4190$0.4190
10$0.3590$3.5910
100$0.2490$24.8630
500$0.1960$97.7500
1000$0.1580$158.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
SeriesµCool™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTLJF3117
Continuous Drain Current (ID) @ 25°C2.3A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)6.2 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)531 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation710mW (Ta)
RDS(on) Drain-to-Source On Resistance100mOhm @ 2A, 4.5V
Package Type (Mfr.)6-WDFN (2x2)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1V @ 250µA
Package / Case6-WDFN Exposed Pad
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTLJF3117P
Environmental Information
Material Declaration NTLJF3117PT1Gonsemi REACHonsemi RoHS
PCN Packaging
Covering Tape/Material Chg 20/May/2016
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTLJF3117PT1G, manufactured by Onsemi, is a surface-mount electronic component featuring a P-Channel MOSFET and a Schottky diode in a compact 6-WDFN package measuring 2x2 mm. This device is capable of operating with a voltage of 20V, a current of 2.3A under standard ambient conditions, and can handle a power dissipation of 710mW. The integrated Schottky diode provides efficient performance with a forward voltage drop of 1V at 250µA, while the MOSFET exhibits a low on-resistance of 100mOhm at 2A and 4.5V, which can contribute to reduced power loss and enhanced efficiency in its applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.