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NTHS4501NT1N-Channel 30 V 4.9A (Ta) 1.3W (Ta) Surface Mount ChipFET™

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ABRmicro #.ABR2045-NTHS45-1016670
ManufacturerOnsemi
MPN #.NTHS4501NT1
Estimated Lead Time-
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DatasheetDatasheetNTHS4501N(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTHS45
Continuous Drain Current (ID) @ 25°C4.9A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.1 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)462 pF @ 24 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.3W (Ta)
RDS(on) Drain-to-Source On Resistance38mOhm @ 4.9A, 10V
Package Type (Mfr.)ChipFET™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-SMD, Flat Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTHS4501N
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 03/Jan/2008
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTHS4501NT1 is a surface mount N-Channel MOSFET produced by Onsemi, designed for efficient power management and switching applications. This component is capable of handling a voltage of up to 30V and a continuous drain current of 4.9A at a maximum power dissipation of 1.3W when adequately cooled. It exhibits a low on-state resistance of 38mOhm at a drain current of 4.9A and a gate-source voltage of 10V, which helps minimize power loss and improve performance. The MOSFET is built in the ChipFET™ package, which is compact and supports efficient thermal management, providing enhanced reliability in various electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.