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NTHS2101PT1GP-Channel 8 V 5.4A (Tj) 1.3W (Ta) Surface Mount ChipFET™
N/A
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ABRmicro #.ABR2045-NTHS21-1002257
ManufacturerOnsemi
MPN #.NTHS2101PT1G
Estimated Lead Time-
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DatasheetNTHS2101P(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTHS21
Continuous Drain Current (ID) @ 25°C5.4A (Tj)
Drain-to-Source Voltage (VDS)8 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 6.4 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-
Maximum Power Dissipation1.3W (Ta)
RDS(on) Drain-to-Source On Resistance25mOhm @ 5.4A, 4.5V
Package Type (Mfr.)ChipFET™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 250µA
Package / Case8-SMD, Flat Leads
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Environmental Information
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTHS2101PT1G, manufactured by Onsemi, is a surface-mount P-Channel MOSFET housed in a ChipFET™ package. It is designed to handle a maximum drain current of 5.4A at a junction temperature (Tj) and a power dissipation of 1.3W at ambient temperature (Ta). It operates with a gate-source voltage of up to 8V. The MOSFET exhibits an on-resistance of 25 milliohms at a current of 5.4A and gate voltage of 4.5V. Additionally, it has an input capacitance of 2400 pF at a gate-source voltage of 6.4V. These specifications make it suitable for various electronic power control and switching applications.
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