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NTHL050N65S3HFN-Channel 650 V 58A (Tc) 378W (Tc) Through Hole TO-247-3
1:$11.6260
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ABRmicro #.ABR2045-NTHL05-1036928
ManufacturerOnsemi
MPN #.NTHL050N65S3HF
Estimated Lead Time-
SampleGet Free Sample
DatasheetNTHL050N65S3HF(PDF)
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In Stock: 275
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 11.6260
Ext. Price$ 11.6260
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$11.6260$11.6260
30$9.4120$282.3490
120$8.8580$1062.9680
510$8.0280$4094.4080
1020$7.3630$7510.3880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
SeriesFRFET®, SuperFET® III
Packaging
Tube
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberNTHL050
Continuous Drain Current (ID) @ 25°C58A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)125 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5017 pF @ 400 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation378W (Tc)
RDS(on) Drain-to-Source On Resistance50mOhm @ 29A, 10V
Package Type (Mfr.)TO-247-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 1.7mA
Package / CaseTO-247-3
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Datasheets
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PCN Design/Specification
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL LevelNot Required
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTHL050N65S3HF is a high-performance N-Channel MOSFET manufactured by Onsemi, designed for efficient power management in electrical circuits. Operating at a maximum voltage of 650 V and capable of handling a continuous current of 58A at the case temperature (Tc), this component is built for robust power delivery. It can dissipate up to 378W under specified thermal conditions, facilitated by its through-hole mounting in a TO-247-3 package. The MOSFET features a low gate charge of 125 nC at 10 V, with a gate-to-source voltage range of ±30V, making it a suitable choice for high-power and high-voltage applications.
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