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NTHD5904NT1N-Channel 20 V 2.5A (Ta) 640mW (Ta) Surface Mount ChipFET™
N/A
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ABRmicro #.ABR2045-NTHD59-942560
ManufacturerOnsemi
MPN #.NTHD5904NT1
Estimated Lead Time-
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DatasheetNTHD5904N(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTHD59
Continuous Drain Current (ID) @ 25°C2.5A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)465 pF @ 16 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation640mW (Ta)
RDS(on) Drain-to-Source On Resistance65mOhm @ 3.3A, 4.5V
Package Type (Mfr.)ChipFET™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±8V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 250µA
Package / Case8-SMD, Flat Leads
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Datasheets
Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTHD5904NT1 is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications in a ChipFET™ package. It supports a drain-to-source voltage of 20V and a continuous drain current of 2.5A when mounted on a standard PCB. The device can dissipate a power of 640mW under these conditions. It operates effectively with gate-source voltages of both 2.5V and 4.5V, and features an input capacitance of 465 pF at 16V. This makes the NTHD5904NT1 suitable for tasks that require compact and efficient voltage control.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.