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NTHD4P02FT1GP-Channel 20 V 2.2A (Tj) 1.1W (Tj) Surface Mount ChipFET™

1:$1.3690

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTHD4P-1002710
ManufacturerOnsemi
MPN #.NTHD4P02FT1G
Estimated Lead Time-
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In Stock: 2024
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3690
Ext. Price$ 1.3690
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3690$1.3690
10$1.1190$11.1880
100$0.8700$87.0190
500$0.7370$368.6880
1000$0.6000$600.3130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberNTHD4
Continuous Drain Current (ID) @ 25°C2.2A (Tj)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)6 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)300 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.1W (Tj)
RDS(on) Drain-to-Source On Resistance155mOhm @ 2.2A, 4.5V
Package Type (Mfr.)ChipFET™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 250µA
Package / Case8-SMD, Flat Leads
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTHD4P02FT1G is a P-Channel MOSFET manufactured by Onsemi, designed for use in surface mount applications with its ChipFET™ package. It operates with a voltage of 20V and can support a continuous current of 2.2A, with a power dissipation capacity of 1.1W. This component functions efficiently at gate-source voltages of 2.5V and 4.5V, with a total gate charge of 6 nC at 4.5V and an input capacitance of 300 pF at 10V, making it suitable for various electronic circuits and designs that require compact and reliable MOSFET technology.
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