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NTHD4N02FT1N-Channel 20 V 2.9A (Tj) 910mW (Tj) Surface Mount ChipFET™

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ABRmicro #.ABR2045-NTHD4N-925928
ManufacturerOnsemi
MPN #.NTHD4N02FT1
Estimated Lead Time-
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DatasheetDatasheetNTHD4N02F(PDF)
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In Stock: 6
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTHD4N
Continuous Drain Current (ID) @ 25°C2.9A (Tj)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET FeatureSchottky Diode (Isolated)
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)4 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)300 pF @ 10 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation910mW (Tj)
RDS(on) Drain-to-Source On Resistance80mOhm @ 2.9A, 4.5V
Package Type (Mfr.)ChipFET™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 250µA
Package / Case8-SMD, Flat Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTHD4N02F
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 03/Jan/2008
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTHD4N02FT1 is a surface mount N-channel MOSFET manufactured by Onsemi, designed for efficient electronic switching and amplification tasks. It operates with a maximum continuous drain current of 2.9 A and a maximum drain-source voltage of 20 V. The device is encapsulated in a compact ChipFET™ package, optimizing it for space-constrained applications. It features a maximum power dissipation of 910 mW, making it suitable for moderate power applications. With gate-source voltage thresholds of 2.5 V and 4.5 V, and a gate charge tolerance of ±12 V, this MOSFET allows for flexible control in various circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.