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NTGS3443T2GP-Channel 20 V 2.2A (Ta) 500mW (Ta) Surface Mount 6-TSOP

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ABRmicro #.ABR2045-NTGS34-941321
ManufacturerOnsemi
MPN #.NTGS3443T2G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTGS3443, NVGS3443(PDF)
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In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTGS34
Continuous Drain Current (ID) @ 25°C2.2A (Ta)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))2.5V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)565 pF @ 5 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance65mOhm @ 4.4A, 4.5V
Package Type (Mfr.)6-TSOP
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±12V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.5V @ 250µA
Package / CaseSOT-23-6 Thin, TSOT-23-6
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTGS3443, NVGS3443
Environmental Information
onsemi REACHonsemi RoHS
PCN Design/Specification
NTGS34xx Copper Wire 08/Oct/2008
PCN Obsolescence/ EOL
Multiple Devices 21/Jan/2010
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTGS3443T2G from Onsemi is a P-Channel MOSFET designed for surface mount applications, encapsulated in a 6-TSOP package. It is rated for a maximum voltage of 20 V and can handle up to 2.2A of current at ambient temperature conditions, with a power dissipation limit of 500mW. The device features a gate charge of 15 nC at a gate-source voltage of 4.5 V and can tolerate gate-source voltages of up to ±12 V. With an on-resistance of 65 mOhm when conducting a current of 4.4A at a gate voltage of 4.5V, this MOSFET provides a reliable switching solution for various electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.