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NTE4151PT1GP-Channel 20 V 760mA (Tj) 313mW (Tj) Surface Mount SC-89-3

1:$0.3080

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTE415-951559
ManufacturerOnsemi
MPN #.NTE4151PT1G
Estimated Lead Time18 Weeks
SampleGet Free Sample
DatasheetDatasheetNTA,NTE4151P(PDF)
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In Stock: 58042
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3080
Ext. Price$ 0.3080
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3080$0.3080
10$0.2400$2.4010
100$0.1450$14.4500
500$0.1330$66.4060
1000$0.0910$91.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberNTE4151
Continuous Drain Current (ID) @ 25°C760mA (Tj)
Drain-to-Source Voltage (VDS)20 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))1.8V, 4.5V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)2.1 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)156 pF @ 5 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation313mW (Tj)
RDS(on) Drain-to-Source On Resistance360mOhm @ 350mA, 4.5V
Package Type (Mfr.)SC-89-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±6V
VGS(th) Gate-to-Source Threshold Voltage (Max.)1.2V @ 250µA
Package / CaseSC-89, SOT-490
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTA,NTE4151P
Environmental Information
Material Declaration NTE4151PT1Gonsemi RoHS
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The NTE4151PT1G is a P-Channel MOSFET manufactured by Onsemi, designed for surface mount applications in a compact SC-89-3 package. It operates with a maximum voltage of 20V and can handle a continuous current of up to 760mA. The device has a power dissipation of 313mW under certain thermal conditions. With a charge of 2.1 nC at a gate-source voltage of 4.5V and an input capacitance of 156 pF at 5V, it is tailored for efficient switching performance in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.