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NTDV20N06T4GN-Channel 60 V 20A (Ta) 1.88W (Ta), 60W (Tj) Surface Mount DPAK

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ABRmicro #.ABR2045-NTDV20-1003572
ManufacturerOnsemi
MPN #.NTDV20N06T4G
Estimated Lead Time-
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DatasheetDatasheetNTD20N06(PDF)
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTDV20
Continuous Drain Current (ID) @ 25°C20A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)30 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1015 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.88W (Ta), 60W (Tj)
RDS(on) Drain-to-Source On Resistance46mOhm @ 10A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD20N06
Environmental Information
Material Declaration NTDV20N06T4Gonsemi REACHonsemi RoHS
PCN Assembly/Origin
G700HC to G700HF 24/Oct/2016
PCN Obsolescence/ EOL
Mult Dev EOL 16/Jul/2019Reactivation 29/Aug/2018
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTDV20N06T4G is an N-channel MOSFET manufactured by Onsemi, designed for surface mount applications and housed in a DPAK package. It features a drain-source voltage rating of 60 volts and can handle a continuous current of 20 amps at ambient temperature (Ta), with a power dissipation capability of 1.88 watts (Ta) and 60 watts at the junction (Tj). The device has a gate threshold voltage of 4 volts at a gate current of 250µA and a total gate charge of 30 nC when driven at 10 volts, which ensures efficient switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.