ABR MCRO Logo
Image is for reference only, the actual product serves as the standard.
NTD6600NT4GN-Channel 100 V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Surface Mount DPAK

N/A

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-NTD660-940984
ManufacturerOnsemi
MPN #.NTD6600NT4G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTD6600N(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed Authenticity
Technical Support
Fast Refund
Free Shipping (over $960)
Issue an Invoice
24/7 Manual Service
In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
BS108ZL1GN/A
Onsemi
N-Channel 200 V 250mA (Ta) 350mW (Ta) Through Hole TO-92 (TO-226)
BUH150N/A
Onsemi
Bipolar (BJT) Transistor NPN 700 V 15 A 23MHz 150 W Through Hole TO-220
FDG6301N$0.3590
Onsemi
Mosfet Array 25V 220mA 300mW Surface Mount SC-88 (SC-70-6)
FDT86106LZ$1.1630
Onsemi
N-Channel 100 V 3.2A (Ta) 2.2W (Ta) Surface Mount SOT-223-4
HUFA75337S3STN/A
Onsemi
N-Channel 55 V 75A (Tc) 175W (Tc) Surface Mount TO-263 (D2PAK)
HUFA75842S3SN/A
Onsemi
N-Channel 150 V 43A (Tc) 230W (Tc) Surface Mount TO-263 (D2PAK)
NTQD6968R2N/A
Onsemi
Mosfet Array 20V 6.6A 1.42W Surface Mount 8-TSSOP
Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD66
Continuous Drain Current (ID) @ 25°C12A (Ta)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)700 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.28W (Ta), 56.6W (Tc)
RDS(on) Drain-to-Source On Resistance146mOhm @ 6A, 5V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD6600N
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 24/Jan/2011
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD6600NT4G is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications in a DPAK package. It features a maximum drain-source voltage of 100 V and can handle a continuous current of up to 12A at ambient temperature. The device provides a power dissipation capability of 1.28W in free air and 56.6W when mounted on a suitable heat sink (Tc conditions). It has a gate threshold voltage of 5V, with an on-resistance of 146 milliohms at 6A and a gate-source voltage of 5V. The MOSFET also exhibits a drain-source on-voltage of 2V at a drain current of 250µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.