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NTD5865NL-1GN-Channel 60 V 46A (Tc) 71W (Tc) Through Hole IPAK
N/A
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ABRmicro #.ABR2045-NTD586-991173
ManufacturerOnsemi
MPN #.NTD5865NL-1G
Estimated Lead Time-
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DatasheetNTD5865NL(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD58
Continuous Drain Current (ID) @ 25°C46A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1400 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation71W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 20A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD5865NL-1G is an N-channel MOSFET manufactured by Onsemi, designed for switching and amplification purposes. It supports a voltage of 60V and handles a current of 46A when properly heat-sinked, with a power dissipation of 71W under optimal conditions. This MOSFET has a low on-resistance of 16 milliohms at a gate-source voltage of 10V and a drain current of 20A, enhancing its efficiency and performance in power management. It features a gate charge of 29 nanocoulombs at 10V, contributing to its switching capabilities. The device is packaged in an IPAK through-hole format, facilitating straightforward handling and soldering in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.