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NTD5807NT4GN-Channel 40 V 23A (Tc) 33W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NTD580-977104
ManufacturerOnsemi
MPN #.NTD5807NT4G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTD5807N(PDF)
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In Stock: 19
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD58
Continuous Drain Current (ID) @ 25°C23A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)603 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation33W (Tc)
RDS(on) Drain-to-Source On Resistance31mOhm @ 5A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD5807N
Environmental Information
onsemi REACHonsemi RoHS
PCN Assembly/Origin
Qualification Assembly Test Site 20/Feb/2014
PCN Obsolescence/ EOL
Multiple Devices 05/Apr/2014
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD5807NT4G is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount in a DPAK package. It is capable of handling up to 40 V and 23 A under specific conditions, with a power dissipation of 33 W. This semiconductor component features a drain-to-source on-state resistance of 31 milliohms when operating at 5 A and 10 V, making it efficient for various switching tasks. It requires a gate threshold voltage of 2.5 V to conduct at 250 µA, highlighting its suitability for low-voltage drive applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.