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NTD5413NT4GN-Channel 60 V 30A (Ta) 68W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NTD541-1024542
ManufacturerOnsemi
MPN #.NTD5413NT4G
Estimated Lead Time-
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DatasheetDatasheetNTD5413N(PDF)
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In Stock: 13
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD54
Continuous Drain Current (ID) @ 25°C30A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)46 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1725 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation68W (Tc)
RDS(on) Drain-to-Source On Resistance26mOhm @ 20A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Onsemi NTD5413NT4G is a surface mount N-Channel MOSFET housed in a DPAK package, designed to handle a maximum of 60 V and 30 A of current at ambient temperature (Ta) with a power dissipation capacity of 68 W at case temperature (Tc). It features a gate charge of 46 nC at 10 V and a capacitance of 1725 pF at 25 V, making it suitable for efficient switching operations in various electronic circuits. The component's design focuses on providing reliable performance in compact form factors typical of electronic designs, ensuring efficient thermal and electrical performance.
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