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NTD50N03R-001N-Channel 25 V 7.8A (Ta), 45A (Tc) 1.5W (Ta), 50W (Tc) Through Hole IPAK
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ABRmicro #.ABR2045-NTD50N-903775
ManufacturerOnsemi
MPN #.NTD50N03R-001
Estimated Lead Time-
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DatasheetNTD50N03R(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD50
Continuous Drain Current (ID) @ 25°C7.8A (Ta), 45A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 11.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 11.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)750 pF @ 12 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.5W (Ta), 50W (Tc)
RDS(on) Drain-to-Source On Resistance12mOhm @ 30A, 11.5V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)