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NTD4970NT4GN-Channel 30 V 8.5A (Ta), 36A (Tc) 1.38W (Ta), 24.6W (Tc) Surface Mount DPAK
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ABRmicro #.ABR2045-NTD497-1022655
ManufacturerOnsemi
MPN #.NTD4970NT4G
Estimated Lead Time-
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DatasheetNTD4970N(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD49
Continuous Drain Current (ID) @ 25°C8.5A (Ta), 36A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)8.2 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)774 pF @ 15 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.38W (Ta), 24.6W (Tc)
RDS(on) Drain-to-Source On Resistance11mOhm @ 30A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental Information
PCN Assembly/Origin
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4970NT4G by Onsemi is an N-Channel MOSFET designed for efficient power management in electronic circuits. It is capable of handling a maximum voltage of 30V and a current of up to 8.5A when used in free air, and up to 36A with proper case conditions. The component offers a low on-resistance of 11mOhm at 30A with a gate-source voltage of 10V, ensuring minimized power loss. It features a power dissipation of 1.38W in free air and 24.6W when mounted on a case. Encased in a DPAK surface mount package, it supports a gate-source voltage tolerance of ±20V, making it versatile for various design needs.
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