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NTD4963N-35GN-Channel 30 V 8.1A (Ta), 44A (Tc) 1.1W (Ta), 35.7W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-NTD496-917895
ManufacturerOnsemi
MPN #.NTD4963N-35G
Estimated Lead Time-
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DatasheetDatasheetNTD4963N(PDF)
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In Stock: 10
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 13, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD49
Continuous Drain Current (ID) @ 25°C8.1A (Ta), 44A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)16.2 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1035 pF @ 12 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.1W (Ta), 35.7W (Tc)
RDS(on) Drain-to-Source On Resistance9.6mOhm @ 30A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-251-3 Stub Leads, IPAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD4963N
Environmental Information
onsemi REACHonsemi RoHS
PCN Assembly/Origin
Qualification Multiple Devices 24/Sep/2013
PCN Obsolescence/ EOL
Multiple Devices 17/Apr/2015
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)