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NTD4959NHT4GN-Channel 30 V 9A (Ta), 58A (Tc) 1.3W (Ta), 52W (Tc) Surface Mount DPAK
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ABRmicro #.ABR2045-NTD495-1037373
ManufacturerOnsemi
MPN #.NTD4959NHT4G
Estimated Lead Time-
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DatasheetNTD4959NH(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD49
Continuous Drain Current (ID) @ 25°C9A (Ta), 58A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 11.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)44 nC @ 11.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2155 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.3W (Ta), 52W (Tc)
RDS(on) Drain-to-Source On Resistance9mOhm @ 30A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4959NHT4G is a surface-mount N-Channel MOSFET manufactured by Onsemi, designed for efficient power management and switching applications. It features a maximum voltage rating of 30 V and can handle a current of up to 9A at ambient temperature (Ta) and 58A with case temperature (Tc) considerations. The device supports power dissipation of 1.3W under ambient conditions and 52W with proper thermal management at case temperature. It has a total gate charge of 44 nC when driven at 11.5 V and features threshold voltages of 4.5V and 11.5V, ensuring flexible and reliable operation. Its DPAK surface mount package facilitates easy integration into a variety of electronic systems.
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