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NTD4906N-1GN-Channel 30 V 10.3A (Ta), 54A (Tc) 1.38W (Ta), 37.5W (Tc) Through Hole IPAK
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ABRmicro #.ABR2045-NTD490-990465
ManufacturerOnsemi
MPN #.NTD4906N-1G
Estimated Lead Time-
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DatasheetNTD4906N(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD49
Continuous Drain Current (ID) @ 25°C10.3A (Ta), 54A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1932 pF @ 15 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.38W (Ta), 37.5W (Tc)
RDS(on) Drain-to-Source On Resistance5.5mOhm @ 30A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4906N-1G is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power switching applications. It supports a maximum drain-source voltage of 30V and can handle up to 10.3A current in free-air conditions (Ta) and 54A when mounted on a heat-sink (Tc), with corresponding power dissipation capabilities of 1.38W and 37.5W. The device features a gate-source voltage of ±20V and turns on with a gate threshold voltage of 2.2V at a current of 250µA. Packaged in an IPAK format, this through-hole component provides a robust solution for circuit designs requiring reliable performance under varying thermal conditions.
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