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NTD4863NAT4GN-Channel 25 V 9.2A (Ta), 49A (Tc) 1.27W (Ta), 36.6W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NTD486-1008317
ManufacturerOnsemi
MPN #.NTD4863NAT4G
Estimated Lead Time-
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DatasheetDatasheetNTD4863N(PDF)
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In Stock: 15
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD48
Continuous Drain Current (ID) @ 25°C9.2A (Ta), 49A (Tc)
Drain-to-Source Voltage (VDS)25 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13.5 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)990 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.27W (Ta), 36.6W (Tc)
RDS(on) Drain-to-Source On Resistance9.3mOhm @ 30A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD4863N
Environmental Information
onsemi REACHonsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4863NAT4G is an N-Channel MOSFET manufactured by Onsemi, designed for surface mounting in a DPAK package. It operates at a maximum voltage of 25 V and supports a continuous drain current of 9.2A when considering a Ta (ambient temperature) environment, and up to 49A in a Tc (case temperature) environment. The device features a power dissipation of 1.27W at Ta and 36.6W at Tc, with a low on-resistance of 9.3mOhm at 30A and 10V, ensuring efficient current flow. Additionally, it includes an input capacitance of 990 pF at 12 V, contributing to its effective performance in switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.