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NTD4858NT4GN-Channel 25 V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Surface Mount DPAK
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ABRmicro #.ABR2045-NTD485-947991
ManufacturerOnsemi
MPN #.NTD4858NT4G
Estimated Lead Time-
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DatasheetNTD4858N(PDF)
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Lifecycle StatusObsolete
Base Product NumberNTD4858
Continuous Drain Current (ID) @ 25°C11.2A (Ta), 73A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19.2 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1563 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.3W (Ta), 54.5W (Tc)
RDS(on) Drain-to-Source On Resistance6.2mOhm @ 30A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4858NT4G is an N-Channel MOSFET manufactured by Onsemi, designed for surface mount applications in a DPAK package. It can handle a maximum drain-source voltage of 25V and features a gate-source voltage tolerance of ±20V. The MOSFET supports a continuous drain current of 11.2A when measured with the ambient temperature, and up to 73A when measured with the case temperature, with power dissipation ratings of 1.3W for ambient conditions and 54.5W for case conditions. It operates effectively with a gate threshold voltage range starting at 4.5V and extending to 10V.
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