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NTD4858N-35GN-Channel 25 V 11.2A (Ta), 73A (Tc) 1.3W (Ta), 54.5W (Tc) Through Hole IPAK

1:$0.7860

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ABRmicro #.ABR2045-NTD485-977870
ManufacturerOnsemi
MPN #.NTD4858N-35G
Estimated Lead Time-
SampleGet Free Sample
DatasheetDatasheetNTD4858N(PDF)
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In Stock: 511
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7860
Ext. Price$ 0.7860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7860$0.7860
75$0.6300$47.2550
150$0.4990$74.9060
525$0.4230$222.0090
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD4858
Continuous Drain Current (ID) @ 25°C11.2A (Ta), 73A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)19.2 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1563 pF @ 12 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.3W (Ta), 54.5W (Tc)
RDS(on) Drain-to-Source On Resistance6.2mOhm @ 30A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-251-3 Stub Leads, IPAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD4858N
Environmental Information
Material Declaration NTD4858N-35Gonsemi REACHonsemi RoHS
PCN Assembly/Origin
Mult Devices 29/Aug/2017
PCN Obsolescence/ EOL
Mult Dev EOL 08/Jul/2021
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4858N-35G is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power management and switching applications. It can handle a maximum continuous drain current of 11.2A when measured in free air (Ta) and up to 73A when mounted on a heatsink (Tc). The device can dissipate power up to 1.3W in free air and 54.5W when appropriately cooled. Its threshold voltage is 2.5V at a gate current of 250µA, and it has a gate charge of 19.2 nC at 4.5V, indicating a relatively fast switching capability. The input capacitance of the MOSFET is 1563 pF at 12V, allowing for efficient charge and discharge cycles. This component is housed in a Through Hole IPAK package, providing a balance between thermal performance and ease of assembly.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.