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NTD4857NAT4GN-Channel 25 V 12A (Ta), 78A (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NTD485-1019193
ManufacturerOnsemi
MPN #.NTD4857NAT4G
Estimated Lead Time-
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In Stock: 1750
Shipped From Shenzhen or Hong Kong Warehouses
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Bulk
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Base Product NumberNTD48
Continuous Drain Current (ID) @ 25°C12A (Ta), 78A (Tc)
Drain-to-Source Voltage (VDS)25 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1960 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation-
RDS(on) Drain-to-Source On Resistance5.7mOhm @ 30A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 07/Jul/2010
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4857NAT4G is an N-channel MOSFET produced by Onsemi, designed for surface mount applications with a DPAK package. It operates at a maximum voltage of 25V and supports a continuous current of up to 12A when measured in free air (Ta) and up to 78A when attached to a heat sinking case (Tc). With a low on-state resistance of 5.7mOhm at 30A and 10V, it allows for efficient current flow, while its gate charge is specified at 24 nC when driven at 4.5V. This makes the NTD4857NAT4G an efficient choice for power management in compact electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.