The NTD4856N-1G is an N-Channel MOSFET manufactured by Onsemi, designed for use in power management applications. It features a maximum drain-to-source voltage of 25 V and can handle a continuous drain current of 13.3A when measured at ambient temperature (Ta) and up to 89A with an adequately cooled case (Tc). The power dissipation capacity is 1.33W at Ta and 60W at Tc, indicating its robustness in high-power environments. The MOSFET is housed in a through-hole IPAK package, facilitating its integration into circuit boards. It has a gate charge of 27 nC at 4.5 V and a threshold voltage of 2.5V at 250µA, highlighting its efficiency in swiftly switching states.