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NTD4810NHT4GN-Channel 30 V 9A (Ta), 54A (Tc) 1.28W (Ta), 50W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NTD481-996354
ManufacturerOnsemi
MPN #.NTD4810NHT4G
Estimated Lead Time-
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DatasheetDatasheetNTD4810NH(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD48
Continuous Drain Current (ID) @ 25°C9A (Ta), 54A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 11.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1225 pF @ 12 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.28W (Ta), 50W (Tc)
RDS(on) Drain-to-Source On Resistance10mOhm @ 30A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD4810NH
Environmental Information
onsemi RoHS
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4810NHT4G is an N-Channel MOSFET produced by Onsemi, designed for surface-mount applications in a DPAK package. It can handle a drain-source voltage of up to 30 volts and supports a continuous drain current of 9A when considering the thermal limitations of a standard ambient temperature setup (Ta), reaching up to 54A with appropriate case temperature management (Tc). The device exhibits a low on-state resistance, with a typical value of 10 milliohms at 30A and 10V, ensuring efficient operation with reduced power losses. This MOSFET can tolerate gate-source voltages of ±20V and necessitates a gate threshold voltage of 4.5V, with a maximum rating of 11.5V. The power dissipation capacity of this component is rated at 1.28W for ambient temperature conditions and 50W when adequately cooled to maintain case temperature limits.
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