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NTD4808N-35GN-Channel 30 V 10A (Ta), 63A (Tc) 1.4W (Ta), 54.6W (Tc) Through Hole IPAK
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ABRmicro #.ABR2045-NTD480-950142
ManufacturerOnsemi
MPN #.NTD4808N-35G
Estimated Lead Time-
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DatasheetNTD4808N, NVD4808N(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD48
Continuous Drain Current (ID) @ 25°C10A (Ta), 63A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 11.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)13 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1538 pF @ 12 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.4W (Ta), 54.6W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 30A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-251-3 Stub Leads, IPAK
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4808N-35G is a semiconductor component from Onsemi, designed as an N-Channel MOSFET. It operates with a voltage rating of 30 V and can handle a continuous current of 10A in a free air (Ta) setting, or up to 63A when mounted on a case (Tc). The power dissipation capability of the device is 1.4W in free air and can increase to 54.6W on a case. The package style is a Through Hole IPAK, which facilitates mounting on a PCB. Its gate charge is 13 nC at 4.5 V, and its input capacitance is 1538 pF at 12 V, making it suitable for efficient switching performance. The MOSFET operates with a gate threshold voltage that ranges between 4.5V and 11.5V.
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