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NTD4805N-35GN-Channel 30 V 12.7A (Ta), 95A (Tc) 1.41W (Ta), 79W (Tc) Through Hole IPAK
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ABRmicro #.ABR2045-NTD480-996304
ManufacturerOnsemi
MPN #.NTD4805N-35G
Estimated Lead Time-
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DatasheetNTD4805N, NVD4805N(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD48
Continuous Drain Current (ID) @ 25°C12.7A (Ta), 95A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 11.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)48 nC @ 11.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2865 pF @ 12 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.41W (Ta), 79W (Tc)
RDS(on) Drain-to-Source On Resistance5mOhm @ 30A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-251-3 Stub Leads, IPAK
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Environmental Information
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4805N-35G is an N-channel MOSFET manufactured by Onsemi. It is designed to handle a maximum voltage of 30 volts and supports a current of up to 12.7 amps at ambient temperature (Ta) and 95 amps when attached to a suitable heat sink or cooling solution (Tc). The device is encased in a compact Through Hole IPAK package, allowing for efficient thermal management, boasting a power dissipation capacity of 1.41 watts at ambient and 79 watts when properly cooled. Additionally, it has a gate charge of 48 nanocoulombs at a gate voltage of 11.5 volts, and can tolerate gate-to-source voltages of up to ±20 volts, ensuring versatile operation in various electronic circuits.
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