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NTD4804NA-1GN-Channel 30 V 14.5A (Ta), 124A (Tc) 1.43W (Ta), 93.75W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-NTD480-951941
ManufacturerOnsemi
MPN #.NTD4804NA-1G
Estimated Lead Time-
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DatasheetDatasheetNTD4804NA(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD48
Continuous Drain Current (ID) @ 25°C14.5A (Ta), 124A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 11.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4490 pF @ 12 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.43W (Ta), 93.75W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 30A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD4804NA
Environmental Information
onsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 21/Jan/2010
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4804NA-1G, manufactured by Onsemi, is an N-channel MOSFET designed for efficient switching and amplification tasks. It operates with a voltage rating of 30V and can handle a current of 14.5A when mounted on a typical ambient (Ta) surface and 124A when attached to a properly designed thermal (Tc) solution. The device has power dissipation ratings of 1.43W for Ta and 93.75W for Tc, demonstrating its capability to handle substantial energy loads when adequately cooled. Additionally, it features a gate charge of 40 nC at a gate-source voltage of 4.5V and can withstand voltages up to ±20V. The MOSFET requires gate threshold voltages of 4.5V and 11.5V for proper operation and is available in a through-hole IPAK package, making it suitable for insertion into a variety of electronic assemblies.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.