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NTD4804N-35GN-Channel 30 V 14.5A (Ta), 124A (Tc) 1.43W (Ta), 107W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-NTD480-996262
ManufacturerOnsemi
MPN #.NTD4804N-35G
Estimated Lead Time-
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DatasheetDatasheetNTD,NVD4804N(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD48
Continuous Drain Current (ID) @ 25°C14.5A (Ta), 124A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 11.5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)40 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4490 pF @ 12 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.43W (Ta), 107W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 30A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-251-3 Stub Leads, IPAK
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD,NVD4804N
Environmental Information
onsemi RoHS
PCN Obsolescence/ EOL
Device update 23/Dec/2010Multiple Devices 07/Jul/2010Multiple Devices 30/Sept/2011
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4804N-35G from Onsemi is an N-Channel MOSFET specifically designed for efficient power switching applications. It operates with a drain-source voltage of 30 V and features a continuous drain current rating of 14.5A when used with a junction temperature (Ta) and 124A with a case temperature (Tc). The power dissipation capabilities are 1.43W (Ta) and 107W (Tc), indicating its suitability for managing high power levels. Housed in a through-hole IPAK package, this MOSFET provides a total gate charge of 40 nC at 4.5 V, with threshold voltages of 4.5V and 11.5V. The device's metal oxide construction promotes effective conduction with reduced gate drive power requirements.
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