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NTD4302T4GN-Channel 30 V 8.4A (Ta), 68A (Tc) 1.04W (Ta), 75W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NTD430-996486
ManufacturerOnsemi
MPN #.NTD4302T4G
Estimated Lead Time-
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DatasheetDatasheetNTD4302(PDF)
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberNTD4302
Continuous Drain Current (ID) @ 25°C8.4A (Ta), 68A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2400 pF @ 24 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.04W (Ta), 75W (Tc)
RDS(on) Drain-to-Source On Resistance10mOhm @ 20A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Extended Links
Datasheets
NTD4302
Environmental Information
Material Declaration NTD4302T4Gonsemi REACHonsemi RoHS
PCN Assembly/Origin
Qualification Assembly Test Site 20/Feb/2014
PCN Obsolescence/ EOL
Mult Dev EOL 30/Jun/2022
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD4302T4G is an N-Channel MOSFET manufactured by Onsemi, designed for efficient electrical conductivity with a 30V voltage rating. It features a current carrying capability of 8.4A when at ambient temperature (Ta) and up to 68A when attached to a case (Tc), with power dissipation limits of 1.04W and 75W respectively in similar conditions. This surface-mount device is housed in a DPAK package and has notable electrical characteristics such as a gate charge of 80 nC at 10V and an input capacitance of 2400 pF at 24V, making it suitable for various switching applications where these specifications align with the design criteria.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.