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NTD40N03RT4N-Channel 25 V 7.8A (Ta), 32A (Tc) 1.5W (Ta), 50W (Tc) Surface Mount DPAK

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ABRmicro #.ABR2045-NTD40N-1007318
ManufacturerOnsemi
MPN #.NTD40N03RT4
Estimated Lead Time-
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DatasheetDatasheetNTD40N03R(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberNTD40
Continuous Drain Current (ID) @ 25°C7.8A (Ta), 32A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)5.78 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)584 pF @ 20 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.5W (Ta), 50W (Tc)
RDS(on) Drain-to-Source On Resistance16.5mOhm @ 10A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD40N03R
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 06/Oct/2006
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD40N03RT4 by Onsemi is an N-Channel MOSFET designed for efficient power management, suitable for surface-mount applications in a DPAK package. It operates with a drain-to-source voltage of up to 25V and a continuous current of 7.8A when considering the ambient temperature (Ta), and up to 32A when considering the case temperature (Tc). This MOSFET supports a power dissipation of 1.5W at ambient temperature and 50W at case temperature. It features a threshold voltage of 2V at 250µA and drives capacitances efficiently with a gate charge of 5.78 nC at a gate-to-source voltage of 4.5V. This combination of electrical characteristics makes the NTD40N03RT4 a reliable and efficient choice for controlling power in electronic circuits.
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