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NTD3808N-1GN-Channel 16 V 12A (Ta), 76A (Tc) 1.3W (Ta), 52W (Tc) Through Hole IPAK

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ABRmicro #.ABR2045-NTD380-1009087
ManufacturerOnsemi
MPN #.NTD3808N-1G
Estimated Lead Time-
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DatasheetDatasheetNTD3808N(PDF)
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In Stock: 15
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Packaging
Tube
Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD38
Continuous Drain Current (ID) @ 25°C12A (Ta), 76A (Tc)
Drain-to-Source Voltage (VDS)16 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)21 nC @ 4.5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1660 pF @ 12 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.3W (Ta), 52W (Tc)
RDS(on) Drain-to-Source On Resistance5.8mOhm @ 15A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.5V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD3808N-1G is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power management. With a voltage rating of 16V, it supports a continuous drain current of 12A in free air (Ta) and 76A with the case (Tc) at optimal conditions. Its power dissipation capability is 1.3W in free air and up to 52W with the case, enhancing thermal performance in more constrained environments. The device features a gate threshold voltage at 4.5V and 10V and exhibits an input capacitance of 1660 pF at 12V. The IPAK package simplifies through-hole mounting, while a forward voltage drop of 2.5V at 250µA facilitates moderate power switching applications.
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