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NTD32N06GN-Channel 60 V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Surface Mount DPAK

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ABRmicro #.ABR2045-NTD32N-926397
ManufacturerOnsemi
MPN #.NTD32N06G
Estimated Lead Time-
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DatasheetDatasheetNTD32N06(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD32
Continuous Drain Current (ID) @ 25°C32A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1725 pF @ 25 V
Mfronsemi
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.5W (Ta), 93.75W (Tj)
RDS(on) Drain-to-Source On Resistance26mOhm @ 16A, 10V
Package Type (Mfr.)DPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
NTD32N06
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 21/Jan/2010
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD32N06G is an N-channel MOSFET manufactured by Onsemi, designed for surface mount applications in a DPAK package. It is capable of handling a maximum voltage of 60 volts and a continuous current of 32 amps in a free-air (Ta) environment. The device has a power dissipation capability of 1.5 watts in a free-air condition and up to 93.75 watts when measured at the junction temperature (Tj). It features a gate-source voltage rating of ±20 volts and a gate charge of 60 nanocoulombs at a gate voltage of 10 volts, which indicates its efficiency in switching applications. The MOSFET is built using metal oxide technology, emphasizing reliable electronic performance in high-power scenarios.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.