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NTD32N06-1GN-Channel 60 V 32A (Ta) 1.5W (Ta), 93.75W (Tj) Through Hole IPAK
N/A
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ABRmicro #.ABR2045-NTD32N-944248
ManufacturerOnsemi
MPN #.NTD32N06-1G
Estimated Lead Time-
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DatasheetNTD32N06(PDF)
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD32
Continuous Drain Current (ID) @ 25°C32A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)60 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1725 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.5W (Ta), 93.75W (Tj)
RDS(on) Drain-to-Source On Resistance26mOhm @ 16A, 10V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Environmental Information
PCN Obsolescence/ EOL
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD32N06-1G is an N-Channel MOSFET manufactured by Onsemi, designed for efficient power handling in electronic circuits. It operates at a voltage of 60V and can handle a continuous current of 32A. The device features a power dissipation capacity of 1.5W when measured at ambient temperature (Ta) and up to 93.75W when measured at junction temperature (Tj). This MOSFET is built in the IPAK through-hole package, facilitating easy integration into various types of hardware. Additional specifications include a gate-to-source voltage rating of ±20V, a threshold voltage of 10V, and an input capacitance of 1725 pF at 25V.
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