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NTD3055L170-001N-Channel 60 V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Through Hole IPAK

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ABRmicro #.ABR2045-NTD305-929464
ManufacturerOnsemi
MPN #.NTD3055L170-001
Estimated Lead Time-
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DatasheetDatasheetNTD3055L170(PDF)
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In Stock: 20
Shipped From Shenzhen or Hong Kong Warehouses
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Packaging
Tube
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberNTD30
Continuous Drain Current (ID) @ 25°C9A (Ta)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)10 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)275 pF @ 25 V
Mfronsemi
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation1.5W (Ta), 28.5W (Tj)
RDS(on) Drain-to-Source On Resistance170mOhm @ 4.5A, 5V
Package Type (Mfr.)IPAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±15V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
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Extended Links
Datasheets
NTD3055L170
Environmental Information
onsemi REACHonsemi RoHS
PCN Obsolescence/ EOL
Multiple Devices 06/Oct/2006
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The NTD3055L170-001, manufactured by Onsemi, is an N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for use in electronic circuits. It has a drain-source voltage rating of 60 V and a maximum continuous drain current of 9A when mounted in a package rated for ambient temperature (Ta). The component is capable of handling up to 1.5W of power at ambient temperature, increasing to 28.5W when considering junction temperature (Tj). Housed in a Through Hole IPAK package, it features a gate charge of 10 nC at 5 V gate-source voltage and showcases input capacitance of 275 pF at a drain-source voltage of 25 V. This component is suitable for various applications requiring efficient power switching and handling capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.